ACSIN-7: Proceedings of the Seventh International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures, Nara, Japan, November 16-20, 2003IWASAKI, Hiroshi; ZAIMA, Shigeaki; OSHIMA, Chuhei et al.Applied surface science. 2004, Vol 237, Num 1-4, issn 0169-4332, 701 p.Conference Proceedings

Influence of Sn incorporation and growth temperature on crystallinity of Ge_1―xSn_X layers heteroepitaxially grown on Ge(110) substratesASANO, Takanori; SHIMURA, Yosuke; NAKATSUKA, Osamu et al.Thin solid films. 2013, Vol 531, pp 504-508, issn 0040-6090, 5 p.Article

Influence of C incorporation on the initial growth of epitaxial NiSi₂ on Si(100)OKADA, Emi; NAKATSUKA, Osamu; OIDA, Satoshi et al.Applied surface science. 2004, Vol 237, Num 1-4, pp 150-155, issn 0169-4332, 6 p.Conference Paper

Energy level broadening of defects causing nonideality in nearly ideal Si Schottky barriersMAEDA, Keiji.Applied surface science. 2004, Vol 237, Num 1-4, pp 165-169, issn 0169-4332, 5 p.Conference Paper

Development of new X-ray microscopy using a low-energy electron beamUEDA, Kazuyuki.Applied surface science. 2004, Vol 237, Num 1-4, pp 636-640, issn 0169-4332, 5 p.Conference Paper

Electrical properties of epitaxial NiSi₂/Si contacts with extremely flat interface formed in Ni/Ti/Si(001) systemNAKATSUKA, Osamu; SUZUKI, Atsushi; SAKAI, Akira et al.Microelectronic engineering. 2006, Vol 83, Num 11-12, pp 2272-2276, issn 0167-9317, 5 p.Conference Paper

Design of electron correlation effects in interfaces and nanostructuresAOKI, Hideo.Applied surface science. 2004, Vol 237, Num 1-4, pp 2-12, issn 0169-4332, 11 p.Conference Paper

Elementary processes of vibrationally mediated motions of single adsorbed moleculesUEBA, H.Applied surface science. 2004, Vol 237, Num 1-4, pp 565-571, issn 0169-4332, 7 p.Conference Paper

Current topics of silicon germanium devicesKASPER, Erich.Applied surface science. 2008, Vol 254, Num 19, pp 6158-6161, issn 0169-4332, 4 p.Conference Paper

Comparative analysis of the Si dangling bonds saturation by H or D in gas and liquid phasesCHIKALOVA-LUZINA, O; MATSUMOTO, T.Applied surface science. 2004, Vol 237, Num 1-4, pp 45-50, issn 0169-4332, 6 p.Conference Paper

Optical second harmonic spectroscopy of a Au(100) 5 x 20 reconstructed surfaceIWAI, T; MIZUTANI, G.Applied surface science. 2004, Vol 237, Num 1-4, pp 279-283, issn 0169-4332, 5 p.Conference Paper

Time-resolved core-level photoelectron spectroscopy and reflection high-energy electron diffraction study of surface phase transition on GaAs(001)MAEDA, Fumihiko; WATANABE, Yoshio.Applied surface science. 2004, Vol 237, Num 1-4, pp 224-229, issn 0169-4332, 6 p.Conference Paper

Ultra-water-repellent surface: fabrication of complicated structure of SiO₂ nanoparticles by electrostatic self-assembled filmsSOENO, Takuji; INOKUCHI, Kohei; SHIRATORI, Seimei et al.Applied surface science. 2004, Vol 237, Num 1-4, pp 543-547, issn 0169-4332, 5 p.Conference Paper

Effective Work Function Control With Aluminum Postdoping in the Ni Silicide/HfSiON SystemsTSUCHIYA, Yoshinori; YOSHIKI, Masahiko; KOGA, Junji et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 10, pp 2648-2656, issn 0018-9383, 9 p.Article

Proceedings of the Fifth International Symposium on Control of Semiconductor InterfacesMUROTA, Junichi; ZAIMA, Shigeaki; MOCHIZUKI, Yasunori et al.Applied surface science. 2008, Vol 254, Num 19, issn 0169-4332, 285 p.Conference Proceedings

Metal-diamond semiconductor interface and photodiode applicationKOIDE, Yasuo.Applied surface science. 2008, Vol 254, Num 19, pp 6268-6272, issn 0169-4332, 5 p.Conference Paper

Hydrogen interaction with Si(1 1 1)√3x√3-B surfacesYOSHIMURA, Masamichi; WATANABE, Kazutaka; UEDA, Kazuyuki et al.Applied surface science. 2004, Vol 237, Num 1-4, pp 115-118, issn 0169-4332, 4 p.Conference Paper

Atomic geometry and theoretical scanning tunneling microscopy images of K chains on InAs(110)YI, Hongsuk; LEE, Sangsan; KIM, Hanchul et al.Applied surface science. 2004, Vol 237, Num 1-4, pp 200-205, issn 0169-4332, 6 p.Conference Paper

Luminescence in Cu-implanted ZnO thin filmsSAKAGUCHI, Isao; HISHITA, Syunichi; HANEDA, Hajime et al.Applied surface science. 2004, Vol 237, Num 1-4, pp 358-362, issn 0169-4332, 5 p.Conference Paper

ACSIN-7: Proceedings of the 7th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures, Nara, Japan, November 16-20, 2003IWASAKI, Hiroshi; ZAIMA, Shigeaki; OSHIMA, Chuhei et al.Thin solid films. 2004, Vol 464-65, issn 0040-6090, 516 p.Conference Proceedings

Crystalline orientation dependence of electrical properties of Mn Germanide/Ge(1 1 1) and (0 0 1) Schottky contactsNISHIMURA, Tsuyoshi; NAKATSUKA, Osamu; AKIMOTO, Shingo et al.Microelectronic engineering. 2011, Vol 88, Num 5, pp 605-609, issn 0167-9317, 5 p.Conference Paper

Ballistic/quasi-ballistic transport in nanoscale transistorNATORI, Kenji.Applied surface science. 2008, Vol 254, Num 19, pp 6194-6198, issn 0169-4332, 5 p.Conference Paper

Magic layer thickness in Bi ultrathin films on Si(111) surfaceSAITO, Mineo; OHNO, Takahisa; MIYAZAKI, Tsuyoshi et al.Applied surface science. 2004, Vol 237, Num 1-4, pp 80-85, issn 0169-4332, 6 p.Conference Paper

Effect of an Ag buffer layer on a Cu/Ag/Si systemYUKAWA, M; KITAGAWA, H; IIDA, S et al.Applied surface science. 2004, Vol 237, Num 1-4, pp 156-160, issn 0169-4332, 5 p.Conference Paper

Kondo effect and surface-state electronsLIMOT, L; BERNDT, R.Applied surface science. 2004, Vol 237, Num 1-4, pp 576-580, issn 0169-4332, 5 p.Conference Paper